 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BC 337 / BC 338 NPN Si-Epitaxial PlanarTransistors General Purpose Transistors NPN 625 mW TO-92 (10D3) 0.18 g Power dissipation - Verlustleistung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC Tj TS Grenzwerte (TA = 25/C) BC 337 45 V 50 V 5V 625 mW 1) 800 mA 150/C - 55...+ 150/C BC 338 25 V 30 V Characteristics (Tj = 25/C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis Group -16 VCE = 1 V, IC = 100 mA Group -25 Group -40 VCE = 40 V VCE = 20 V VCE = 40 V, Tj = 125/C VCE = 20 V, Tj = 125/C BC 337 BC 338 BC 337 BC 338 hFE hFE hFE ICES ICES ICES ICES 100 160 250 - - - - Kennwerte (Tj = 25/C) Typ. 160 250 400 - - - - Max. 250 400 630 200 nA 200 nA 10 :A 10 :A Collector-Emitter cutoff current - Kollektorreststrom 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 4 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Collector-Emitter breakdown voltage Collector-Emitter Durchbruchspannung IC = 10 mA IC = 0.1 mA Emitter-Base breakdown voltage Emitter-Basis-Durchbruchspannung IE = 10 :A IC = 500 mA, IB = 50 mA Base-Emitter voltage - Basis-Emitter-Spannung VCE = 1 V, IC = 300 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Cap. - Kollektor-Basis-Kap. VCB = 10 V, f = 1 MHz CCB0 - RthA fT - VBE - V(BR)EB0 VCEsat 5V - BC 337 BC 338 BC 337 BC 338 V(BR)CES V(BR)CES V(BR)CES V(BR)CES 40 V 20 V 50 V 30 V BC 337 / BC 338 Kennwerte (Tj = 25/C) Typ. Max. - - - - - - - - - - - 100 MHz 12 pF - 0.7 V 1.2 V - - 200 K/W 1) Collector saturation volt. - Kollektor-Sattigungsspannung Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren BC 327 / BC 328 Available current gain groups per type Lieferbare Stromverstarkungsgruppen pro Typ BC 337-16 BC 338-16 BC 337-25 BC 338-25 BC337-40 BC338-40 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 01.11.2003 5 |
Price & Availability of BC337
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |